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MCM63P818ZP66

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MCM63P818ZP66

Cache SRAM, 256KX18, 7ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63P818ZP66 is a 256K x 18 Cache SRAM featuring a 7ns maximum access time. This CMOS device operates synchronously with a pipelined architecture, designed for high-speed data buffering applications. The MCM63P818 series component is housed in a PBGA119 package, a rectangular plastic/epoxy grid array with 119 bottom-terminated ball terminals on a 1.270mm pitch. Its memory density is 4.7Mbits, organized as 262,144 words by 18 bits. The operating voltage range is 3.135V to 3.6V, with a nominal supply of 3.3V. This surface-mount component is suitable for industrial and automotive electronics, where its performance characteristics are critical for processing intensive tasks. The operating temperature range is 0°C to 70°C.

Additional Information

Series: MCM63P818RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyCMOS
Access_Time_Max7.0000000000000000
Additional_FeaturePIPELINED ARCHITECTURE
JESD_30_CodeR-PBGA-B119
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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