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MCM63P737KTQ150R

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MCM63P737KTQ150R

Cache SRAM, 128KX36, 3.8ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63P737KTQ150R is a 128K x 36 Cache SRAM featuring a pipelined architecture. This CMOS component offers a maximum access time of 3.8ns and operates synchronously. Designed for surface mounting, it is housed in a 100-terminal LQFP (R-PQFP-G100) package with a 0.65mm terminal pitch. The device supports a supply voltage range of 3.135V to 3.465V, with a nominal 3.3V. Operating temperature ranges from 0°C to 70°C. Applications for this memory device span networking infrastructure, high-performance computing, and advanced graphics processing units. The memory density is 4.5Mb.

Additional Information

Series: MCM63P737RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max3.8000000000000000
Additional_FeaturePIPELINED ARCHITECTURE
JESD_30_CodeR-PQFP-G100
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization128KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals100
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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