MCM63L918AFC4.0R
Late-Write SRAM, 512KX18, 4ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
Quality Control: Learn More
NXP Semiconductors MCM63L918AFC4-0R is a 9 Mbit Late-Write Synchronous SRAM organized as 512K words by 18 bits. This CMOS component offers a maximum access time of 4ns and operates from a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The MCM63L918 series component is housed in a 119-ball PBGA (R-PBGA-B119) package with a 1.27mm terminal pitch. This device is suitable for applications requiring high-speed data buffering and storage across industries such as networking, telecommunications, and high-performance computing. The operating temperature range is 0°C to 70°C.
Additional Information
Series: MCM63L918RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 4.0000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 512KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
Request a Quote
Clients Also Buy
MCM63L918AFC4.0
Late-Write SRAM, 512KX18, 4ns, CMOS, PBGA119
MCM63L918AFC3.8R
Late-Write SRAM, 512KX18, 3.8ns, CMOS, PBGA119
MCM63L918AFC3.8
Late-Write SRAM, 512KX18, 3.8ns, CMOS, PBGA119