MCM63L918AFC3.8R
Late-Write SRAM, 512KX18, 3.8ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM63L918 Late-Write SRAM, part number MCM63L918AFC3-8R, offers a 512K x 18 memory organization with a maximum access time of 3.8ns. This synchronous SRAM utilizes CMOS technology and operates from a 3.0V to 3.6V supply, with a nominal voltage of 3.3V. Packaged in a R-PBGA-B119 (PBGA119) footprint measuring 14mm x 22mm with a 1.27mm terminal pitch, it is suitable for surface-mount applications. The component is designed for demanding applications across various industries including telecommunications, networking, and industrial control systems, where high-speed data buffering and cache memory are critical. Its late-write architecture enhances system performance by optimizing data transfer timing.
Additional Information
Series: MCM63L918RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 3.8000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 512KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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