MCM63L918AFC3.8
Late-Write SRAM, 512KX18, 3.8ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM63L918AFC3-8 is a high-performance synchronous Late-Write SRAM. This component features a memory organization of 512K words by 18 bits, delivering a total memory density of 9Mb. It offers an impressive access time of 3.8ns, crucial for demanding applications. Fabricated using advanced CMOS technology, this device operates reliably within a temperature range of 0°C to 70°C and supports a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. The MCM63L918AFC3-8 is housed in a PBGA119 package, a rectangular, bottom-terminal ball grid array with a 1.27mm pitch and a maximum seated height of 2.77mm. This component is widely utilized in networking, telecommunications, and high-speed computing systems where rapid data buffering and access are paramount.
Additional Information
Series: MCM63L918RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 3.8000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 512KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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