MCM63L836AFC4.5R
Late-Write SRAM, 256KX36, 4.5ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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This NXP Semiconductors MCM63L836 series memory component, part number MCM63L836AFC4-5R, is a 256K x 36 Late-Write SRAM. Featuring a maximum access time of 4.5ns, this device operates on a 3.3V nominal supply voltage, with a range of 3.0V to 3.6V. The CMOS technology ensures high performance and low power consumption. Packaged in a 119-ball PBGA (R-PBGA-B119) with a 1.27mm terminal pitch, its dimensions are 14mm x 22mm with a maximum seated height of 2.77mm. This synchronous, parallel memory solution is suitable for applications in telecommunications, networking, and high-performance computing systems requiring fast data buffering and storage. Operating temperature range is 0°C to 70°C.
Additional Information
Series: MCM63L836RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 4.5000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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