MCM63F919ZP8R
Cache SRAM, 512KX18, 8ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM63F919 series Cache SRAM, part number MCM63F919ZP8R, offers a 512K x 18 memory organization with a maximum access time of 8ns. This CMOS device operates synchronously, featuring a flow-through architecture and a maximum clock frequency of 100MHz. The component utilizes common I/O and 3-state output characteristics within a PBGA119 package, measuring 14.00mm x 22.00mm with a terminal pitch of 1.27mm. It operates within a supply voltage range of 3.135V to 3.465V and a temperature range of 0°C to 70°C. This high-performance memory is suitable for applications in telecommunications, networking, and high-speed computing systems.
Additional Information
Series: MCM63F919RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 8.0000000000000000 |
| Additional_Feature | FLOW-THROUGH ARCHTECTURE |
| Clock_Frequency_Max | 100.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 512KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA119,7X17,50 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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