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MCM63F919ZP7R

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MCM63F919ZP7R

Cache SRAM, 512KX18, 7ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63F919 series Cache SRAM, part number MCM63F919ZP7R, offers a 512K x 18 memory organization with a maximum access time of 7ns. This CMOS device operates synchronously with a maximum clock frequency of 117MHz and features a flow-through architecture. The MCM63F919ZP7R is housed in a 119-ball PBGA package (R-PBGA-B119) with a 1.27mm terminal pitch, measuring 14mm x 22mm with a maximum seated height of 2.4mm. It supports a common I/O type and 3-state outputs, operating within a supply voltage range of 3.135V to 3.465V. Typical applications for this high-speed cache memory include networking infrastructure, high-performance computing, and telecommunications equipment. The operating temperature range is 0°C to 70°C.

Additional Information

Series: MCM63F919RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length22.0000
Access_Time_Max7.0000000000000000
Additional_FeatureFLOW-THROUGH ARCHTECTURE
Clock_Frequency_Max117.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization512KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals119
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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