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MCM63F837ZP8.5R

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MCM63F837ZP8.5R

Cache SRAM, 256KX36, 8.5ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63F837 series asynchronous Cache SRAM, part number MCM63F837ZP8-5R, offers a 256K x 36 memory organization with a maximum access time of 8.5 ns. This CMOS component operates synchronously with a maximum clock frequency of 90 MHz and features a flow-through architecture. The device utilizes a PBGA119 package with a 1.27 mm terminal pitch, a rectangular shape measuring 14.00 mm x 22.00 mm, and a seated height of 2.40 mm. It supports a supply voltage range of 3.135V to 3.465V, with a nominal voltage of 3.3V, and operates within a temperature range of 0°C to 70°C. The MCM63F837ZP8-5R is employed in high-performance computing, networking infrastructure, and data storage applications.

Additional Information

Series: MCM63F837RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length22.0000
Access_Time_Max8.5000000000000000
Additional_FeatureFLOW-THROUGH ARCHTECTURE
Clock_Frequency_Max90.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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