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MCM63F837ZP8.5

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MCM63F837ZP8.5

Cache SRAM, 256KX36, 8.5ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

The NXP Semiconductors MCM63F837ZP8-5 is a synchronous Cache SRAM offering a memory organization of 256K x 36 bits, resulting in a density of 9Mb. This CMOS component features an access time of 8.5 ns and supports a maximum clock frequency of 90 MHz. Its flow-through architecture is designed for high-speed data handling with common I/O. The device operates within a temperature range of 0°C to 70°C and utilizes a 3.3V nominal supply voltage, with a range from 3.135V to 3.465V. Packaged in a 119-ball PBGA (R-PBGA-B119) with a 1.27mm terminal pitch, it is suitable for surface-mount applications. This component finds utility in networking infrastructure, high-performance computing, and telecommunications equipment.

Additional Information

Series: MCM63F837RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length22.0000
Access_Time_Max8.5000000000000000
Additional_FeatureFLOW-THROUGH ARCHTECTURE
Clock_Frequency_Max90.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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