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MCM63F819ZP8.5R

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MCM63F819ZP8.5R

Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63F819ZP8-5R is a 4Mbit Cache SRAM featuring a 256K x 18 memory organization. This component operates synchronously with a maximum clock frequency of 90 MHz and a fast access time of 8.5 ns. It utilizes a flow-through architecture and supports common I/O. The device is fabricated using CMOS technology and packaged in a 119-ball PBGA (R-PBGA-B119) with a terminal pitch of 1.27 mm. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.135 V and 3.6 V, with a nominal voltage of 3.3 V. The MCM63F819 series is suitable for high-performance applications in computing, networking, and telecommunications. Its standby current is rated at a maximum of 5 mA.

Additional Information

Series: MCM63F819RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length22.0000
Access_Time_Max8.5000000000000000
Additional_FeatureFLOW THROUGH ARCHITECTURE
Clock_Frequency_Max90.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX18
Memory_Width18
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Current_Max0.005000000000000
Standby_Voltage_Min3.125000
Supply_Current_Max330.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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