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MCM63F819TQ9R

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MCM63F819TQ9R

Cache SRAM, 256KX18, 9ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

The NXP Semiconductors MCM63F819TQ9R is a 4Mb Cache SRAM featuring a 256K x 18 memory organization. This CMOS component offers a maximum access time of 9ns and supports synchronous operation with a clock frequency up to 75MHz. Designed with a flow-through architecture and common I/O, it operates from a nominal supply voltage of 3.3V, with a range of 3.135V to 3.6V, and a standby voltage minimum of 3.125V. The MCM63F819TQ9R is housed in a 100-pin PQFP package (R-PQFP-G100) with a 0.65mm terminal pitch. Typical applications include high-performance computing, networking infrastructure, and embedded systems requiring fast data buffering. The device operates within a temperature range of 0°C to 70°C.

Additional Information

Series: MCM63F819RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length20.0000
Access_Time_Max9.0000000000000000
Additional_FeatureFLOW THROUGH ARCHITECTURE
Clock_Frequency_Max75.00000
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX18
Memory_Width18
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals100
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Standby_Current_Max0.005000000000000
Standby_Voltage_Min3.125000
Supply_Current_Max300.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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