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MCM63F819TQ10

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MCM63F819TQ10

Cache SRAM, 256KX18, 10ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

The NXP Semiconductors MCM63F819TQ10 is a synchronous Cache SRAM with a memory organization of 256K x 18 bits, providing a total density of 4.7 Mbits. This component features a maximum access time of 10ns and operates with a flow-through architecture. Designed for high-speed applications, it supports a clock frequency up to 66 MHz and utilizes CMOS technology. The MCM63F819TQ10 is housed in a 100-lead LQFP package with a 0.65mm terminal pitch. It operates within a supply voltage range of 3.135V to 3.6V, with a nominal voltage of 3.3V, and has an operating temperature range of 0°C to 70°C. This component is suitable for use in networking equipment, telecommunications infrastructure, and high-performance computing systems.

Additional Information

Series: MCM63F819RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length20.0000
Access_Time_Max10.0000000000000000
Additional_FeatureFLOW THROUGH ARCHITECTURE
Clock_Frequency_Max66.00000
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX18
Memory_Width18
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals100
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Standby_Current_Max0.005000000000000
Standby_Voltage_Min3.125000
Supply_Current_Max285.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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