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MCM63F819KTQ9

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MCM63F819KTQ9

Cache SRAM, 256KX18, 9ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63F819KTQ9 is a 4.19 Mbit Cache SRAM featuring a 256K x 18 organization and a maximum access time of 9ns. This CMOS device operates synchronously with a flow-through architecture, supporting parallel data transfer. It is packaged in a 100-lead PQFP (R-PQFP-G100) with a 0.65mm terminal pitch. The operating voltage range is 3.135V to 3.6V, with a nominal supply of 3.3V. Operating temperature is specified from 0°C to 70°C. This component is utilized in applications within the networking, computing, and telecommunications industries.

Additional Information

Series: MCM63F819RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max9.0000000000000000
Additional_FeatureFLOW-THROUGH ARCHITECTURE
JESD_30_CodeR-PQFP-G100
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals100
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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