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MCM63F737ZP9R

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MCM63F737ZP9R

Cache SRAM, 128KX36, 9ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

The NXP Semiconductors MCM63F737ZP9R is a 4.19 Mbit (128K x 36) Cache SRAM utilizing CMOS technology. This synchronous memory device offers a maximum access time of 9ns and supports a clock frequency of up to 75MHz. It features a flow-through architecture and operates within a supply voltage range of 3.135V to 3.6V, with a nominal voltage of 3.3V. The MCM63F737ZP9R is housed in a 119-ball PBGA (R-PBGA-B119) package with a terminal pitch of 1.27mm. Typical applications for this component include high-performance computing, networking equipment, and data storage systems. Standby current is rated at a maximum of 5mA, and operating temperature ranges from 0°C to 70°C. The memory organization is 128K words by 36 bits.

Additional Information

Series: MCM63F737RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length22.0000
Access_Time_Max9.0000000000000000
Additional_FeatureFLOW THROUGH ARCHITECTURE
Clock_Frequency_Max75.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization128KX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals119
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Current_Max0.005000000000000
Standby_Voltage_Min3.125000
Supply_Current_Max370.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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