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MCM63F737ZP9

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MCM63F737ZP9

Cache SRAM, 128KX36, 9ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63F737ZP9 is a high-performance Cache SRAM with a memory organization of 128K words by 36 bits, providing a total density of 4.718 Mbit. This CMOS device features a maximum access time of 9ns and supports synchronous operation with a maximum clock frequency of 75MHz. The MCM63F737 series component utilizes a flow-through architecture and comes in a 119-ball Plastic Ball Grid Array (PBGA) package with a terminal pitch of 1.27mm. Operating within a voltage range of 3.125V to 3.6V, it is designed for surface mounting. Applications for this component can be found in areas such as high-speed computing, networking infrastructure, and embedded systems demanding rapid data access. The device operates from 0°C to 70°C.

Additional Information

Series: MCM63F737RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length22.0000
Access_Time_Max9.0000000000000000
Additional_FeatureFLOW THROUGH ARCHITECTURE
Clock_Frequency_Max75.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization128KX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals119
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Current_Max0.005000000000000
Standby_Voltage_Min3.125000
Supply_Current_Max370.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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