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MCM63F737TQ10R

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MCM63F737TQ10R

Cache SRAM, 128KX36, 10ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63F737TQ10R is a 4Mbit synchronous Cache SRAM with a memory organization of 128K x 36. This component features a flow-through architecture and operates at a maximum clock frequency of 66MHz, providing an access time of 10ns. Designed with CMOS technology, it supports a supply voltage range of 3.125V to 3.6V, with a nominal 3.3V. The MCM63F737TQ10R is housed in a 100-pin LQFP (JESD-30 code R-PQFP-G100) package with a terminal pitch of 0.65mm. Its operating temperature range is from 0°C to 70°C. This device finds application in high-performance computing, networking, and embedded systems requiring fast data buffering.

Additional Information

Series: MCM63F737RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length20.0000
Access_Time_Max10.0000000000000000
Additional_FeatureFLOW THROUGH ARCHITECTURE
Clock_Frequency_Max66.00000
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization128KX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals100
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Standby_Current_Max0.005000000000000
Standby_Voltage_Min3.125000
Supply_Current_Max350.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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