MCM6343YJ10B
Cache SRAM, 256KX16, 10ns, CMOS, PDSO44Manufacturer: NXP Semiconductors
Categories: SRAMs
Quality Control: Learn More
NXP Semiconductors MCM6343 series cache SRAM, part number MCM6343YJ10B, offers a 256K x 16 memory organization with a maximum access time of 10ns. This CMOS component operates asynchronously and is housed in a 44-lead PDSO (SOJ) package, featuring J-bend terminals on a 1.27mm pitch. With a supply voltage range of 3.00V to 3.60V and an operating temperature range of 0°C to 70°C, this surface-mount device is suitable for applications in computing, networking, and industrial control systems. The memory density is 4Mbit.
Additional Information
Series: MCM6343RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 10.1600 |
| Technology | CMOS |
| Length | 28.5750 |
| Access_Time_Max | 10.0000000000000000 |
| JESD_30_Code | R-PDSO-J44 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 256KX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 44 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 3.7600 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
MCM63P819KZP166R
Cache SRAM, 256KX18, 3.5ns, CMOS, PBGA119
MCM63P819KTQ133R
Cache SRAM, 256KX18, 4ns, CMOS, PQFP100
MCM63Z818TQ143
ZBT SRAM, 256KX18, 4ns, CMOS, PQFP100
