HEF4720BTD-T
Standard SRAM, 256X1, 580ns, CMOS, PDSO16Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors HEF4720BTD-T is a standard asynchronous CMOS SRAM from the HEF4720 series. This component offers a memory density of 256 bits with an organization of 256 words by 1 bit. Featuring a maximum access time of 580ns and a 3-state output characteristic, it operates within a supply voltage range of 3.0V to 15.0V, with a nominal voltage of 5.0V. The device is housed in a 16-lead R-PDSO-G16 (SOP) plastic package with a terminal pitch of 1.27mm. Its operating temperature range is from -40°C to +85°C. Applications for this memory component span industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: HEF4720RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 3.9000 |
| Technology | CMOS |
| Length | 9.9000 |
| Access_Time_Max | 580.0000000000000000 |
| JESD_30_Code | R-PDSO-G16 |
| Memory_Density | 256.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOP |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 1.7500 |
| Standby_Voltage_Min | 3.000000 |
| Supply_Voltage_Max | 15.00000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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