HEF4720BD
Standard SRAM, 256X1, 580ns, CMOS, CDIP16Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors HEF4720BD is a 256-bit asynchronous standard SRAM with a memory organization of 256 words by 1 bit. This CMOS component operates with a maximum access time of 580 ns and features 3-state outputs. Supplied in a 16-lead CDIP (CERAMIC, GLASS-SEALED, IN-LINE) package, it supports through-hole mounting with a terminal pitch of 2.54 mm. The device operates within a supply voltage range of 3.0V to 15.0V and an industrial temperature range of -40°C to +85°C. Typical applications include industrial control and legacy system designs.
Additional Information
Series: HEF4720RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | CMOS |
| Access_Time_Max | 580.0000000000000000 |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 256.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Standby_Voltage_Min | 3.000000 |
| Supply_Voltage_Max | 15.00000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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