HEF4505BDF
Standard SRAM, 64X1, 660ns, CMOS, CDIP14Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors HEF4505B CMOS Standard SRAM, organized as 64 words by 1 bit, features an asynchronous operating mode with a maximum access time of 660 ns. This component, part number HEF4505BDF, utilizes through-hole mounting in a 14-lead CDIP (R-GDIP-T14) package with a 2.54mm terminal pitch. It operates from a supply voltage range of 4.5V to 15.0V, with a nominal 5V, and features 3-state outputs. The HEF4505BDF is suitable for applications requiring reliable, low-power data storage, commonly found in industrial control systems and legacy equipment designs where robust performance and specific timing characteristics are paramount. Its ceramic, glass-sealed package ensures durability across an operating temperature range of -40°C to +85°C.
Additional Information
Series: HEF4505RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | CMOS |
| Access_Time_Max | 660.0000000000000000 |
| JESD_30_Code | R-GDIP-T14 |
| Memory_Density | 64.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 64X1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 14 |
| Number_of_Words | 64.0000000000000000 |
| Number_of_Words_Code | 64 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Serial |
| Seated_Height_Max | 5.0800 |
| Standby_Voltage_Min | 3.000000 |
| Supply_Voltage_Max | 15.00000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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