HEF4505BDB
Standard SRAM, 64X1, 660ns, CMOS, CDIP14Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors HEF4505BDB is a 64x1 bit CMOS standard SRAM with a maximum access time of 660ns. This asynchronous memory device operates from a 4.5V to 15V supply voltage range, with a nominal supply of 5V, and features 3-state outputs. The HEF4505 series component is housed in a 14-lead CDIP (Ceramic Dual In-line Package) with through-hole mounting, suitable for applications within an operating temperature range of -40°C to +85°C. Its parallel interface and robust construction make it a reliable choice for various industrial and consumer electronics applications requiring small, non-volatile data storage.
Additional Information
Series: HEF4505RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | CMOS |
| Access_Time_Max | 660.0000000000000000 |
| JESD_30_Code | R-GDIP-T14 |
| Memory_Density | 64.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 64X1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 14 |
| Number_of_Words | 64.0000000000000000 |
| Number_of_Words_Code | 64 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Standby_Voltage_Min | 3.000000 |
| Supply_Voltage_Max | 15.00000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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