HEC4505BD
Standard SRAM, 64X1, 660ns, CMOS, CDIP14Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors HEC4505BD is a standard CMOS SRAM with a memory organization of 64 words by 1 bit. This component features a maximum access time of 660ns and operates across a wide temperature range from -55°C to +125°C. The HEC4505BD utilizes a 14-pin CDIP package (JESD30 Code: R-CDIP-T14) with through-hole mounting. Designed for asynchronous operation, it supports supply voltages from 3.0V to 15.0V, with a nominal value of 5V. The output characteristics are 3-state, enabling flexible bus interfacing. This memory IC is suitable for applications in industrial control, aerospace, and defense systems where robust performance and reliability are critical.
Additional Information
Series: HEC4505RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 660.0000000000000000 |
| JESD_30_Code | R-CDIP-T14 |
| Memory_Density | 64.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 64X1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 14 |
| Number_of_Words | 64.0000000000000000 |
| Number_of_Words_Code | 64 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 3.000000 |
| Supply_Voltage_Max | 15.00000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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