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C3F219AD-T

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C3F219AD-T

Standard SRAM, 16X4, 8ns, TTL, PDSO16

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

The NXP Semiconductors C3F219AD-T is a standard asynchronous SRAM with a memory organization of 16 words by 4 bits, providing a total memory density of 64 bits. This component operates with TTL technology and features an access time maximum of 8ns. The device is housed in a 16-lead PDSO (Plastic Dual Small Outline) package, specifically identified by the R-PDSO-G16 code, with a terminal pitch of 1.27mm. Its operating temperature range is from 0°C to 70°C, with a supply voltage range of 4.5V to 5.5V, nominal at 5V. The C3F219AD-T is suitable for applications in industrial automation and consumer electronics.

Additional Information

Series: C3F219RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length10.3000
Width7.5000
TechnologyTTL
Access_Time_Max8.0000000000000000
JESD_30_CodeR-PDSO-G16
Memory_Density64.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization16X4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals16
Number_of_Words16.0000000000000000
Number_of_Words_Code16
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Output_EnableNo
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Parallel_SerialParallel
Seated_Height_Max2.6500
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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