8602301EX
Cache SRAM, 256X1, BipolarManufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors 8602301EX is a 256 x 1 Cache SRAM designed with Bipolar technology. This asynchronous SRAM offers a memory density of 256 bits and operates within a supply voltage range of 4.75V to 5.25V, with a nominal voltage of 5V. The component features a 16-terminal DIP package, specifically an R-XDIP-T16 format, utilizing through-hole mounting. Its operating temperature range spans from -55°C to +125°C, with MIL-STD-883 screening. This device finds application in high-performance computing, telecommunications, and industrial automation systems requiring fast memory access.
Additional Information
Series: 8602301EXRoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | Bipolar |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 256.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 256X1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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