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PSMN4R3-80PS,127

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PSMN4R3-80PS,127

NEXPERIA PSMN4R3-80PS - 120A, 80

Manufacturer: NXP Semiconductors

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 80 V 120A (Tc) 306W (Tc) Through Hole TO-220AB

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)306W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8161 pF @ 40 V

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