BUK7635-100A,118
BUK7635-100 - N-CHANNEL TRENCHMOManufacturer: NXP Semiconductors
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP Semiconductors BUK7635-100A-118 is an N-channel TrenchMOS logic level power MOSFET. This component features a drain-source breakdown voltage of 100 V and a continuous drain current rating of 41 A at 25°C. The device exhibits a low on-resistance of 35 mOhm at 25 A and 10 V Vgs, with a maximum gate-source voltage of ±20 V. Designed for surface mounting in a TO-263-3, D2PAK package, it offers a maximum power dissipation of 149 W. Key parameters include a threshold voltage of 4 V at 1 mA and an input capacitance of 2535 pF at 25 V. This MOSFET is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 149W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2535 pF @ 25 V |
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