BUK6E4R0-75C,127
NEXPERIA BUK6E4R0-75C - 120A, 75Manufacturer: NXP Semiconductors
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP Semiconductors BUK6E4R0-75C is an N-Channel TrenchMOS™ MOSFET rated for 75V drain-to-source voltage. This component offers a continuous drain current of 120A at 25°C with a maximum power dissipation of 306W. Key parameters include a low Rds(on) of 4.2mOhm at 25A and 10V, and a gate charge of 234 nC at 10V. The device features through-hole mounting in an I2PAK package and operates within a temperature range of -55°C to 175°C. Qualified to AEC-Q101 standards, it is suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15450 pF @ 25 V |
| Qualification | AEC-Q101 |
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