BUK6E3R2-55C,127
NEXPERIA BUK6E3R2-55C - 120A, 55Manufacturer: NXP Semiconductors
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP Semiconductors BUK6E3R2-55C-127 is an N-Channel TrenchMOS™ MOSFET designed for demanding applications. This device features a 55V drain-source voltage and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 306W. The low on-resistance is specified at 3.2mOhm maximum at 25A and 10V gate drive. Key parameters include a gate charge of 258 nC at 10V and input capacitance of 15300 pF at 25V.
Engineered for reliability, this component is AEC-Q101 qualified and operates across a wide temperature range of -55°C to 175°C. The I2PAK package (TO-262-3 Long Leads) facilitates through-hole mounting. Its robust construction and performance characteristics make it suitable for automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15300 pF @ 25 V |
| Qualification | AEC-Q101 |
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