BUK6E2R3-40C,127
NEXPERIA BUK6E2R3-40C - 120A, 40Manufacturer: NXP Semiconductors
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The NXP Semiconductors TrenchMOS™ BUK6E2R3-40C is an N-Channel Power MOSFET with a drain-source breakdown voltage (Vdss) of 40V. This device features a low on-resistance (Rds On) of 2.3mOhm at 25A and 10V, with a continuous drain current (Id) capability of 120A at 25°C. Designed for high-power applications, it offers a maximum power dissipation of 306W at 25°C. The gate charge (Qg) is specified at a maximum of 260 nC at 10V, and the input capacitance (Ciss) is 15100 pF at 25V. This component is qualified to AEC-Q101 and manufactured using TrenchMOS™ technology. It is supplied in an I2PAK package for through-hole mounting and is suitable for automotive applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | I2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15100 pF @ 25 V |
| Qualification | AEC-Q101 |
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