SA2T18H450W19SR6
RF MOSFET LDMOS 30V NI1230Manufacturer: NXP Semiconductors
Categories: RF FETs, MOSFETs
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NXP Semiconductors SA2T18H450W19SR6 is a dual RF LDMOS power transistor utilizing the NI-1230S-4S4S package. This device operates within the 1.805GHz to 1.88GHz frequency range, delivering a typical output power of 89W with 16.6dB of gain at 30V test voltage and 800mA test current. Designed for high-power RF amplification, it finds application in cellular infrastructure and base station equipment. The LDMOS technology ensures efficient performance and robust operation. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | NI-1230S-4S4S |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.88GHz |
| Configuration | Dual |
| Power - Output | 89W |
| Gain | 16.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S-4S4S |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 800 mA |
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