MW7IC930NR1
RF MOSFET LDMOS 28V TO270-16Manufacturer: NXP Semiconductors
Categories: RF FETs, MOSFETs
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NXP Semiconductors MW7IC930NR1 is a high-performance RF LDMOS transistor designed for demanding wireless infrastructure applications. This N-channel device operates within the 920 MHz to 960 MHz frequency band, delivering an impressive 3.2W of output power with a typical gain of 35.9 dB. Engineered for efficiency, it features a 28V test voltage and a 285 mA test current, with a robust 65V voltage rating. The MW7IC930NR1 is housed in a TO-270WB-16 package with flat leads, suitable for surface mounting. Its dual LDMOS technology ensures excellent linearity and ruggedness, making it ideal for base station amplifiers and other high-frequency power applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-270-16 Variant, Flat Leads |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 920MHz ~ 960MHz |
| Configuration | 2 N-Channel |
| Power - Output | 3.2W |
| Gain | 35.9dB |
| Technology | LDMOS (Dual) |
| Noise Figure | - |
| Supplier Device Package | TO-270WB-16 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 285 mA |
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