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MW7IC930NR1

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MW7IC930NR1

RF MOSFET LDMOS 28V TO270-16

Manufacturer: NXP Semiconductors

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP Semiconductors MW7IC930NR1 is a high-performance RF LDMOS transistor designed for demanding wireless infrastructure applications. This N-channel device operates within the 920 MHz to 960 MHz frequency band, delivering an impressive 3.2W of output power with a typical gain of 35.9 dB. Engineered for efficiency, it features a 28V test voltage and a 285 mA test current, with a robust 65V voltage rating. The MW7IC930NR1 is housed in a TO-270WB-16 package with flat leads, suitable for surface mounting. Its dual LDMOS technology ensures excellent linearity and ruggedness, making it ideal for base station amplifiers and other high-frequency power applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-270-16 Variant, Flat Leads
Current Rating (Amps)10µA
Mounting TypeSurface Mount
Frequency920MHz ~ 960MHz
Configuration2 N-Channel
Power - Output3.2W
Gain35.9dB
TechnologyLDMOS (Dual)
Noise Figure-
Supplier Device PackageTO-270WB-16
Voltage - Rated65 V
Voltage - Test28 V
Current - Test285 mA

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