BLF8G20LS-160VJ
RF FET LDMOS 65V 20DB SOT1239BManufacturer: NXP Semiconductors
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The NXP Semiconductors BLF8G20LS-160VJ is a high-performance LDMOS RF power transistor designed for demanding applications. This SOT1239B packaged device operates at 20 dB gain and features a robust 65V breakdown voltage, making it suitable for broadband applications across the 2 GHz frequency range. Its advanced LDMOS technology delivers excellent linearity and efficiency. This component is engineered for use in base station infrastructure, industrial heating, and broadcast transmitters. The BLF8G20LS-160VJ is supplied in tray packaging.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
Request a Quote
Clients Also Buy
AFT09MP055NR1
RF MOSFET LDMOS 12.5V TO270-4
MW7IC2725NR1
RF MOSFET LDMOS 28V TO270-16
BLC6G27LS-100,118
RF MOSFET
