AFT20P060-4NR3
RF MOSFET LDMOS 28V OM780-4Manufacturer: NXP Semiconductors
Categories: RF FETs, MOSFETs
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NXP Semiconductors RF power LDMOS transistor, part number AFT20P060-4NR3. This N-channel device operates at 2.17 GHz with a typical output power of 60W and a gain of 18.9 dB. Designed for demanding RF applications, it features LDMOS technology and is supplied in an OM-780-4L package for surface mounting. The device is rated for a drain-source voltage of 65V and is tested at 28V with a drain current of 450 mA. Applications include base station infrastructure and other high-power RF systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | OM-780-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Configuration | 2 N-Channel |
| Power - Output | 60W |
| Gain | 18.9dB |
| Technology | LDMOS (Dual) |
| Noise Figure | - |
| Supplier Device Package | OM-780-4L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 450 mA |
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