A2T21H450W19SR6
RF MOSFET LDMOS 30V NI1230Manufacturer: NXP Semiconductors
Categories: RF FETs, MOSFETs
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NXP Semiconductors RF MOSFET LDMOS A2T21H450W19SR6 offers robust performance for demanding RF applications. This device operates within the 2.11GHz to 2.2GHz frequency range, delivering 89W of output power with a typical gain of 15.7dB. Engineered with LDMOS technology, it features a 30V test voltage and a 65V rated voltage, supporting efficient power amplification. The NI-1230S-4S4S package facilitates chassis mounting for thermal management in high-power systems. This component is commonly utilized in base station infrastructure, defense systems, and other high-frequency power amplifier designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | NI-1230S-4S4S |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 2.11GHz ~ 2.2GHz |
| Power - Output | 89W |
| Gain | 15.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S-4S4S |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 800 mA |
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