A2I22D050NR1
RF MOSFET LDMOS 28V TO270-15Manufacturer: NXP Semiconductors
Categories: RF FETs, MOSFETs
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NXP Semiconductors A2I22D050NR1 is an RF LDMOS power transistor designed for high-performance applications. This dual N-channel device operates within the 1.8 GHz to 2.2 GHz frequency range, delivering 5.3W of output power at a test voltage of 28V. It offers a high gain of 31.1 dB and a typical drain current of 520 mA at the specified test conditions. The TO-270WB-15 package is suitable for surface mount configurations. This component finds application in wireless infrastructure, base stations, and other demanding RF power amplification systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-270WB-15 |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 1.8GHz ~ 2.2GHz |
| Configuration | 2 N-Channel |
| Power - Output | 5.3W |
| Gain | 31.1dB |
| Technology | LDMOS (Dual) |
| Noise Figure | - |
| Supplier Device Package | TO-270WB-15 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 520 mA |
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