N82S115N
OTP ROM, 512X8, 60ns, Bipolar, PDIP24Manufacturer: NXP Semiconductors
Categories: OTP ROMs
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NXP Semiconductors N82S115N is a bipolar OTP ROM with a memory organization of 512 words by 8 bits, providing a total density of 4096 bits. This asynchronous device features a maximum access time of 60ns and operates from a supply voltage range of 4.75V to 5.25V, with a nominal voltage of 5V. The N82S115N is housed in a 24-lead PDIP (Plastic Dual In-line Package) with through-hole termination. Its operating temperature range is from 0°C to 75°C. This component is suitable for applications in industrial control, consumer electronics, and telecommunications where fixed program storage is required.
Additional Information
Series: N82S115RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | Bipolar |
| Access_Time_Max | 60.0000000000000000 |
| JESD_30_Code | R-PDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | OTP ROM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 75.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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