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MR4S8ACYS35

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MR4S8ACYS35

MRAM, 2MX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors presents the MR4S8ACYS35, a 2Mx8 parallel MRAM device from the MR4S8 series. This component offers a memory density of 16 Megabits, organized as 2,097,152 words by 8 bits. Featuring a maximum access time of 35 ns and a write cycle time of 35 µs, it operates synchronously with a supply voltage range of 3.0V to 3.6V. The MR4S8ACYS35 is housed in a 44-terminal PDSO package (JESD30 code R-PDSO-G44) with a terminal pitch of 0.80 mm. It supports a wide operating temperature range of -40°C to +85°C and boasts a data retention of at least 20 years. This MRAM is suitable for applications requiring non-volatile memory with fast write speeds, including industrial automation, automotive systems, and consumer electronics.

Additional Information

Series: MR4S8RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max165.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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