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MR4S16ATS35C

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MR4S16ATS35C

MRAM, 1MX16, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

The NXP Semiconductors MR4S16ATS35C is a 16 Mbit Magnetoresistive Random-Access Memory (MRAM) with a 1M x 16 organization. This parallel interface MRAM offers a maximum access time of 35ns and a data retention time of 20 years. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage of 3.0V to 3.6V, with a nominal of 3.3V. The device features a synchronous operating mode and a write cycle time of 35µs. Packaged in a 44-lead TSOP2 (R-PDSO-G44) surface-mount configuration with a 0.8mm terminal pitch, it is suitable for applications demanding non-volatile memory with high speed and endurance. This component finds application in industrial automation and communication systems.

Additional Information

Series: MR4S16RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0350000000000000

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