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MR2S16AYS35

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MR2S16AYS35

MRAM, 256KX16, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR2S16AYS35 is a 256K x 16 bit parallel MRAM with a maximum access time of 35ns. This memory component operates synchronously and offers a data retention time of 20 years. Supplied in a 44-lead TSOP2 package (JESD-30 code R-PDSO-G44), it features a 0.8mm terminal pitch and a surface-mount design. The device operates within a voltage range of 3.0V to 3.6V, with a nominal supply voltage of 3.3V. Standby current is specified at a maximum of 12mA, while supply current can reach up to 155mA. The operating temperature range is from 0°C to 70°C. The MR2S16AYS35 is suitable for applications requiring non-volatile memory with high write endurance and fast read access, commonly found in industrial automation, automotive systems, and communication infrastructure. The write cycle time (tWC) is 35µs.

Additional Information

Series: MR2S16RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density4194304.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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