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MR2S16AVYS35

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MR2S16AVYS35

MRAM, 256KX16, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR2S16AVYS35 is a 4Mbit (256K x 16) Magnetoresistive Random-Access Memory (MRAM) device. This parallel interface MRAM offers a synchronous operating mode with an access time of 35ns. It operates from a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. The device features a data retention time of 20 years and a write cycle time of 35 microseconds. The MR2S16AVYS35 is housed in a 44-lead TSOP2 package with a terminal pitch of 0.8mm, suitable for surface-mount applications. Its operating temperature range is -40°C to +105°C. This component finds application in industrial, automotive, and communication systems requiring non-volatile memory with high speed and endurance. The standby current is a maximum of 12mA, and the supply current is rated at 165mA.

Additional Information

Series: MR2S16RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density4194304.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max105.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max165.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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