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MR2S08ATS35C

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MR2S08ATS35C

MRAM, 512KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR2S08ATS35C is a 4Mb Magnetoresistive Random-Access Memory (MRAM) component organized as 512K words by 8 bits. This parallel interface device offers a maximum access time of 35ns and a robust data retention of 20 years. Operating from a 3.0V to 3.6V supply range with a nominal voltage of 3.3V, it features a low standby current of 12mA. The MR2S08 series MRAM is designed for applications requiring high endurance and fast write speeds, with a write cycle time as low as 35µs. This component is housed in a 44-lead TSOP2 package with a 0.8mm terminal pitch and is suitable for surface mounting. Typical operating temperature ranges from 0°C to 70°C. It finds application in industrial control, automotive systems, and consumer electronics where non-volatility and high performance are critical.

Additional Information

Series: MR2S08RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density4194304.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization512KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0350000000000000

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