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MR1S8AYS35

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MR1S8AYS35

MRAM, 256KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR1S8 series synchronous MRAM, part number MR1S8AYS35. This 256K x 8 memory device offers 2097152 bits of non-volatile memory with a maximum access time of 35ns and data retention exceeding 20 years. Featuring a parallel interface in a 44-terminal PDSO package (TSOP2), it operates from a 3.0V to 3.6V supply. The component is designed for applications requiring high-speed writes and reads without wear-out, suitable for industrial control, automotive systems, and data logging. It supports a single function with a 0.035ms maximum write cycle time and a standby current of 12mA. The operating temperature range is 0°C to 70°C.

Additional Information

Series: MR1S8RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density2097152.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization256KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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