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MR1S16AVYS35

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MR1S16AVYS35

MRAM, 128KX16, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR1S16AVYS35 is a parallel synchronous MRAM operating on a 3.0V to 3.6V supply. This component offers a memory density of 2Mbit, organized as 128K words by 16 bits, with an access time of 35ns. The MR1S16 series MRAM features non-volatility with a data retention time of 20 years. It is housed in a 44-lead TSOP2 package (JESD30 code R-PDSO-G44) suitable for surface mounting. Typical applications include industrial control, automotive systems, and consumer electronics demanding high-speed data storage with inherent data integrity. The operating temperature range is -40°C to +105°C.

Additional Information

Series: MR1S16RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density2097152.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization128KX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max105.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max165.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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