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MR1A8ACYS35

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MR1A8ACYS35

MRAM, 256KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR1A8 series MRAM, part number MR1A8ACYS35, offers a 256K x 8 parallel memory organization with a 35ns access time. This asynchronous MRAM operates across a -40°C to +85°C temperature range and is housed in a 44-terminal TSOP2 package (JESD_30 Code: R-PDSO-G44) with a 0.8mm terminal pitch. Featuring a 20-year data retention minimum, it supports a supply voltage range of 3.0V to 3.6V, with a nominal 3.3V. Standby current is rated at 12mA, and supply current peaks at 165mA. This CMOS technology component is suitable for applications in industrial, automotive, and communication systems requiring non-volatile memory with high endurance and fast write speeds. The memory density is 2097152 bits.

Additional Information

Series: MR1A8RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density2097152.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization256KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max165.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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