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MR1A08AVYS35

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MR1A08AVYS35

MRAM, 256KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

The NXP Semiconductors MR1A08AVYS35 is a 256K x 8 parallel MRAM memory device from the MR1A08 series. This component features a 35 ns maximum access time and offers 20 years of data retention. Operating within a temperature range of -40°C to +105°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. The device is packaged in a 44-terminal, rectangular TSOP2 (R-PDSO-G44) with a 0.8mm terminal pitch, suitable for surface mounting. Key specifications include a standby current of 12mA maximum and a write cycle time of 35 µs maximum. This MRAM is utilized in applications requiring non-volatile data storage with high speed and endurance, often found in industrial control systems, automotive electronics, and communication infrastructure.

Additional Information

Series: MR1A08RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density2097152.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization256KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max105.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max165.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0350000000000000

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