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MR0S8AYS35

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MR0S8AYS35

MRAM, 128KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR0S8AYS35 is a 1 Mbit parallel MRAM device featuring a 128K x 8 memory organization. This component offers a fast access time of 35 ns and a write cycle time of 35 µs, ensuring rapid data operations. Designed for demanding applications, it operates within a temperature range of 0°C to 70°C and supports a supply voltage from 3.0V to 3.6V, with a nominal voltage of 3.3V. The MR0S8AYS35 boasts non-volatility with a data retention time of 20 years. It is housed in a 44-terminal TSOP2 package (JESD30 code R-PDSO-G44) with a terminal pitch of 0.8mm, suitable for surface-mount assembly. Applications for this MRAM include industrial control systems, automotive electronics, and data logging where high speed and data persistence are critical.

Additional Information

Series: MR0S8RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density1048576.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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