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MR0S16ATS35C

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MR0S16ATS35C

MRAM, 64KX16, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

The NXP Semiconductors MR0S16ATS35C is a 64K x 16 parallel MRAM component within the MR0S16 series. This synchronous memory device offers a maximum access time of 35 ns and a data retention of 20 years. Operating with a supply voltage range of 3.0V to 3.6V, it features a standby current of 12 mA and an active supply current up to 155 mA. The component operates within a temperature range of 0°C to 70°C and is housed in a 44-terminal PDSO package (JESD-30 Code: R-PDSO-G44) with a terminal pitch of 0.80 mm. This highly reliable non-volatile memory is suitable for applications in industrial control, automotive systems, and telecommunications infrastructure where robust data integrity and fast access are critical.

Additional Information

Series: MR0S16RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density1048576.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization64KX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0350000000000000

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