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MR0S08AYS35

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MR0S08AYS35

MRAM, 128KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR0S08AYS35 is a 128K x 8 parallel MRAM device, offering 1Mbit of non-volatile memory. This component operates from a 3.0V to 3.6V supply, with a nominal 3.3V, and features a data retention time of 20 years. The access time maximum is 35ns, and the write cycle time maximum (tWC) is also 35µs. Designed for synchronous operation, it supports a wide industrial temperature range of 0°C to 70°C. The MR0S08AYS35 is housed in a 44-terminal TSOP2 package with a 0.8mm terminal pitch. Its CMOS technology and high endurance make it suitable for applications in industrial automation, consumer electronics, and automotive systems where reliable, fast data storage is critical.

Additional Information

Series: MR0S08RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density1048576.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max155.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0350000000000000

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