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MR0A8AVYS35

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MR0A8AVYS35

MRAM, 128KX8, Parallel, PDSO44

Manufacturer: NXP Semiconductors

Categories: MRAMs

Quality Control: Learn More

NXP Semiconductors MR0A8AVYS35 is a 128K x 8 parallel MRAM with a 35ns access time. This asynchronous memory offers 20 years of data retention and operates from a 3.0V to 3.6V supply. The component is housed in a 44-terminal TSOP2 package with a 0.8mm terminal pitch. It features a low standby current of 12mA and a maximum operating current of 165mA. The extended operating temperature range of -40°C to +105°C makes it suitable for demanding applications in automotive, industrial, and communication sectors. Its non-volatile nature and high endurance are key advantages for data logging, configuration storage, and buffering applications. The MR0A8 series provides a robust memory solution for critical embedded systems.

Additional Information

Series: MR0A8RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4100
Width10.1600
TechnologyCMOS
Access_Time_Max35.0000000000000000
Data_Retention_Time_Min20
JESD_30_CodeR-PDSO-G44
Memory_Density1048576.0000000000000000
Memory_IC_TypeMRAM
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeAsynchronous
Operating_Temperature_Max105.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Seated_Height_Max1.2000
Standby_Current_Max0.012000000000000
Standby_Voltage_Min3.000000
Supply_Current_Max165.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual
Write_Cycle_Time_Max_tWC0.0000350000000000

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